STD25N10F7N-Channel 100 V 25A (Tc) 40W (Tc) Surface Mount DPAK
1:$1.0170
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ABRmicro #.ABR2045-STD25N-938901
ManufacturerSTMicroelectronics
MPN #.STD25N10F7
Estimated Lead Time26 Weeks
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Datasheet
STx25N10F7(PDF)
STx25N10F7(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 1.0170
Ext. Price$ 1.0170
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.0170$1.0170
10$0.8300$8.2980
100$0.6460$64.6000
500$0.5470$273.5940
1000$0.4460$446.2500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesDeepGATE™, STripFET™ VII
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSTD25
Continuous Drain Current (ID) @ 25°C25A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)14 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)920 pF @ 50 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation40W (Tc)
RDS(on) Drain-to-Source On Resistance35mOhm @ 12.5A, 10V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Datasheets
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STD25N10F7 by STMicroelectronics is a surface mount N-channel MOSFET housed in a DPAK package. It is capable of handling a drain-source voltage (Vds) of up to 100 volts and a continuous drain current of 25 amperes at the case temperature (Tc). The device exhibits a power dissipation capability of 40 watts at the same temperature. It features a gate-source threshold voltage (Vgs) of 10 volts, with a test condition of 4.5 volts at a gate current of 250 microamperes, and can tolerate gate-source voltages up to ±20 volts. This MOSFET is designed for efficiency and performance in suitable electronic circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.