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STD18NF03LN-Channel 30 V 17A (Tc) 30W (Tc) Surface Mount DPAK

1:$0.6660

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ABRmicro #.ABR2045-STD18N-1003728
ManufacturerSTMicroelectronics
MPN #.STD18NF03L
Estimated Lead Time26 Weeks
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In Stock: 5016
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.6660
Ext. Price$ 0.6660
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.6660$0.6660
10$0.5800$5.8010
100$0.4020$40.1630
500$0.3360$167.8750
1000$0.2860$285.8130
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesSTripFET™ II
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSTD18
Continuous Drain Current (ID) @ 25°C17A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)6.5 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)320 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation30W (Tc)
RDS(on) Drain-to-Source On Resistance50mOhm @ 8.5A, 10V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.2V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STD18NF03L from STMicroelectronics is a semiconductor component characterized as an N-Channel MOSFET. It is engineered to handle a drain-source voltage of up to 30V and can conduct a continuous drain current of 17A when mounted on a surface with adequate heat dissipation. The device offers a low on-resistance of 50mOhm at a gate-source voltage of 10V and a current of 8.5A. It is housed in a DPAK surface-mount package, supporting a power dissipation of 30W under specific conditions, and has a total gate charge of 6.5 nC at a 5V gate-source voltage. The MOSFET is designed to operate optimally at gate voltages of both 5V and 10V.
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