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STD12NF06-1N-Channel 60 V 12A (Tc) 30W (Tc) Through Hole IPAK
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ABRmicro #.ABR2045-STD12N-1003362
ManufacturerSTMicroelectronics
MPN #.STD12NF06-1
Estimated Lead Time-
SampleGet Free Sample
DatasheetSTD12NF06(T4)(PDF)
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Shipping DateNovember 16, 2024
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SeriesSTripFET™ II
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSTD12
Continuous Drain Current (ID) @ 25°C12A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)12 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)315 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation30W (Tc)
RDS(on) Drain-to-Source On Resistance100mOhm @ 6A, 10V
Package Type (Mfr.)IPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STD12NF06-1 is an N-channel MOSFET manufactured by STMicroelectronics. It features a drain-source voltage rating of 60V and a current rating of 12A, making it suitable for handling significant power levels. The MOSFET is housed in a through-hole IPAK package, facilitating ease of mounting. It offers a low on-state resistance of 100 milliohms at 6A and 10V, which ensures efficient operation by minimizing power loss. Additionally, the gate threshold voltage is specified at 4V with a gate-source leakage current of 250µA, indicating its sensitivity to input control signals. Overall, this MOSFET is designed to deliver reliable performance in power management and switching applications.
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