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STD12NF06-1N-Channel 60 V 12A (Tc) 30W (Tc) Through Hole IPAK

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ABRmicro #.ABR2045-STD12N-1003362
ManufacturerSTMicroelectronics
MPN #.STD12NF06-1
Estimated Lead Time-
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In Stock: 15
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Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesSTripFET™ II
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSTD12
Continuous Drain Current (ID) @ 25°C12A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)12 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)315 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation30W (Tc)
RDS(on) Drain-to-Source On Resistance100mOhm @ 6A, 10V
Package Type (Mfr.)IPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STD12NF06-1 is an N-channel MOSFET manufactured by STMicroelectronics. It features a drain-source voltage rating of 60V and a current rating of 12A, making it suitable for handling significant power levels. The MOSFET is housed in a through-hole IPAK package, facilitating ease of mounting. It offers a low on-state resistance of 100 milliohms at 6A and 10V, which ensures efficient operation by minimizing power loss. Additionally, the gate threshold voltage is specified at 4V with a gate-source leakage current of 250µA, indicating its sensitivity to input control signals. Overall, this MOSFET is designed to deliver reliable performance in power management and switching applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.