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STD12N65M5N-Channel 650 V 8.5A (Tc) 70W (Tc) Surface Mount DPAK

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ABRmicro #.ABR2045-STD12N-991845
ManufacturerSTMicroelectronics
MPN #.STD12N65M5
Estimated Lead Time-
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DatasheetDatasheetSTx12N65M5(PDF)
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In Stock: 11
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Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesMDmesh™ V
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberSTD12
Continuous Drain Current (ID) @ 25°C8.5A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)22 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)900 pF @ 100 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation70W (Tc)
RDS(on) Drain-to-Source On Resistance430mOhm @ 4.3A, 10V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
STx12N65M5
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STD12N65M5 is a semiconductor component manufactured by STMicroelectronics, optimized for efficient power management applications. This N-Channel MOSFET is capable of handling a drain-to-source voltage of 650 V and a continuous drain current of 8.5A under specified conditions (case temperature, Tc). Encased in a surface-mount DPAK package, it facilitates compact circuit design while allowing for a power dissipation of up to 70W at the case. The device features a low on-resistance of 430 milliohms at 4.3A and a gate-source voltage of 10V, ensuring reduced power loss during operation. Additionally, it can withstand a maximum gate-source voltage of ±25V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.