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STD12N50M2N-Channel 500 V 10A (Tc) 85W (Tc) Surface Mount DPAK

1:$1.2570

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-STD12N-1038533
ManufacturerSTMicroelectronics
MPN #.STD12N50M2
Estimated Lead Time16 Weeks
SampleGet Free Sample
DatasheetDatasheetSTD12N50M2(PDF)
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In Stock: 2302
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 1.2570
Ext. Price$ 1.2570
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.2570$1.2570
10$1.0320$10.3170
100$0.8020$80.2190
500$0.6800$340.0000
1000$0.5540$553.5630
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesMDmesh™ M2
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSTD12
Continuous Drain Current (ID) @ 25°C10A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)15 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)550 pF @ 100 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation85W (Tc)
RDS(on) Drain-to-Source On Resistance380mOhm @ 5A, 10V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
STD12N50M2
PCN Assembly/Origin
Assembly Site 22/Dec/2022
PCN Packaging
Mult Dev Inner Box Chg 9/Dec/2021
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STD12N50M2 is a power MOSFET developed by STMicroelectronics, featuring an N-channel configuration with a maximum voltage capacity of 500 V and a current rating of 10A when measured at the case temperature (Tc). It boasts an 85W power dissipation capability under specified conditions, further complemented by a gate charge of 15 nC at 10 V, making it suitable for efficient switching performance. Designed to be implemented in surface mount applications, this component is housed in a DPAK package, contributing to its compact form factor. Its construction, utilizing metal-oxide-semiconductor technology, ensures reliable and robust operation in applicable electronic circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.