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STD11NM60N-1N-Channel 600 V 10A (Tc) 90W (Tc) Through Hole IPAK

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ABRmicro #.ABR2045-STD11N-1003160
ManufacturerSTMicroelectronics
MPN #.STD11NM60N-1
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetSTx11NM60N(PDF)
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In Stock: 15
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Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesMDmesh™ II
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSTD11
Continuous Drain Current (ID) @ 25°C10A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)31 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)850 pF @ 50 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation90W (Tc)
RDS(on) Drain-to-Source On Resistance450mOhm @ 5A, 10V
Package Type (Mfr.)IPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
STx11NM60N
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STD11NM60N-1 is a robust N-Channel MOSFET transistor manufactured by STMicroelectronics. It is designed to handle a maximum voltage of 600V and a continuous current of up to 10A when properly cooled. The device delivers a power dissipation capacity of 90W, operating efficiently in through-hole packaging configuration known as IPAK. It features a total gate charge of 31 nC at a 10V gate-source voltage, making it suitable for high-efficiency power management and energy conversion tasks where a compact and reliable semiconductor solution is required.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.