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STD11N60M2-EPN-Channel 600 V 7.5A (Tc) 85W (Tc) Surface Mount DPAK
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ABRmicro #.ABR2045-STD11N-931199
ManufacturerSTMicroelectronics
MPN #.STD11N60M2-EP
Estimated Lead Time-
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In Stock: 12
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Tape & Reel (TR)Cut Tape (CT)
Shipping DateNovember 15, 2024
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SeriesMDmesh™ M2-EP
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Lifecycle StatusObsolete
Base Product NumberSTD11
Continuous Drain Current (ID) @ 25°C7.5A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)12.4 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)390 pF @ 100 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation85W (Tc)
RDS(on) Drain-to-Source On Resistance595mOhm @ 3.75A, 10V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.75V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STD11N60M2-EP is a surface mount N-Channel MOSFET manufactured by STMicroelectronics, featuring a maximum voltage rating of 600V and a continuous current rating of 7.5A when measured at a case temperature (Tc). It is encapsulated in a DPAK package, designed for efficient thermal performance with a power dissipation capability of 85W. The device exhibits an on-state resistance of 595mOhm at 3.75A and 10V, and has a gate charge of 12.4 nC at 10V, making it suitable for high-efficiency power switching applications.
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