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STD10PF06-1P-Channel 60 V 10A (Tc) 40W (Tc) Through Hole IPAK

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ABRmicro #.ABR2045-STD10P-1048948
ManufacturerSTMicroelectronics
MPN #.STD10PF06-1
Estimated Lead Time-
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DatasheetDatasheetSTD10PF06(PDF)
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In Stock: 14
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
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Technical Specifications
SeriesSTripFET™ II
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSTD10
Continuous Drain Current (ID) @ 25°C10A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)21 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)850 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature175°C (TJ)
Maximum Power Dissipation40W (Tc)
RDS(on) Drain-to-Source On Resistance200mOhm @ 5A, 10V
Package Type (Mfr.)IPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
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Datasheets
STD10PF06
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)