STD100N10F7N-Channel 100 V 80A (Tc) 120W (Tc) Surface Mount DPAK
1:$1.8470
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ABRmicro #.ABR2045-STD100-934217
ManufacturerSTMicroelectronics
MPN #.STD100N10F7
Estimated Lead Time26 Weeks
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Datasheet
STx100N10F7 DataSheet(PDF)
STx100N10F7 DataSheet(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 1.8470
Ext. Price$ 1.8470
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.8470$1.8470
10$1.5300$15.3000
100$1.2180$121.7630
500$1.0300$514.7810
1000$0.8730$873.3750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesDeepGATE™, STripFET™ VII
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSTD100
Continuous Drain Current (ID) @ 25°C80A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)61 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4369 pF @ 50 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation120W (Tc)
RDS(on) Drain-to-Source On Resistance8mOhm @ 40A, 10V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Datasheets
Other Related Documents
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STD100N10F7 is an N-Channel MOSFET manufactured by STMicroelectronics, designed for a maximum voltage of 100 V and a continuous drain current of 80 A when properly mounted to manage heat dissipation. It comes in a surface mount DPAK package, allowing for efficient thermal and electrical performance in compact circuits. This MOSFET features a low on-state resistance of 8 milliohms at 40 A with a gate-source voltage of 10 V, ensuring minimal power loss during operation. It also supports a threshold voltage measurement of 4.5 V at 250 µA, making it versatile for a range of electronic applications.
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