Image is for reference only, the actual product serves as the standard.
STB85NS04ZN-Channel 33 V 80A (Tc) 215W (Tc) Surface Mount D2PAK

N/A

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-STB85N-1035741
ManufacturerSTMicroelectronics
MPN #.STB85NS04Z
Estimated Lead Time-
SampleGet Free Sample
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 19
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)
Shipping DateNovember 17, 2024
* Quantity
Send Inquiry
Add To RFQ List
Related Parts
Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Through Hole 16-DIP
N-Channel 100 V 80A (Tc) 150W (Tc) Through Hole TO-220
STU2NK100Z$1.9410
N-Channel 1000 V 1.85A (Tc) 70W (Tc) Through Hole IPAK
N-Channel 30 V 75A (Tc) 60W (Tc) Through Hole TO-251 (IPAK)
N-Channel 200 V 34A (Tc) 180W (Tc) Through Hole TO-247-3
STW69N65M5$7.0440
N-Channel 650 V 58A (Tc) 330W (Tc) Through Hole TO-247-3
STW9NK95Z$2.6060
N-Channel 950 V 7A (Tc) 160W (Tc) Through Hole TO-247-3
Technical Specifications
SeriesSAFeFET™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Lifecycle StatusObsolete
Base Product NumberSTB85N
Continuous Drain Current (ID) @ 25°C80A (Tc)
Drain-to-Source Voltage (VDS)33 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)100 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2500 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation215W (Tc)
RDS(on) Drain-to-Source On Resistance15mOhm @ 30A, 10V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±18V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STB85NS04Z is an N-channel MOSFET manufactured by STMicroelectronics, featuring a drain-source voltage rating of 33 volts and a continuous drain current of 80 amperes when properly heat-sunk. It is capable of handling up to 215 watts of power dissipation under controlled conditions. The device is designed for surface mount applications and comes in a D2PAK package, offering robust thermal performance and efficient heat dissipation. It features a gate-source voltage of ±18 volts, a gate threshold voltage of 4 volts at a gate current of 1mA, and a total gate charge of 2500 picofarads at 25 volts, highlighting its suitability for high-power electronic applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.