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STB85NS04ZN-Channel 33 V 80A (Tc) 215W (Tc) Surface Mount D2PAK
N/A
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ABRmicro #.ABR2045-STB85N-1035741
ManufacturerSTMicroelectronics
MPN #.STB85NS04Z
Estimated Lead Time-
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DatasheetSTB85NS04Z(-1)(PDF)
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In Stock: 19
Shipped From Shenzhen or Hong Kong Warehouses
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Tape & Reel (TR)Cut Tape (CT)
Shipping DateNovember 17, 2024
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SeriesSAFeFET™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Lifecycle StatusObsolete
Base Product NumberSTB85N
Continuous Drain Current (ID) @ 25°C80A (Tc)
Drain-to-Source Voltage (VDS)33 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)100 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2500 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation215W (Tc)
RDS(on) Drain-to-Source On Resistance15mOhm @ 30A, 10V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±18V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STB85NS04Z is an N-channel MOSFET manufactured by STMicroelectronics, featuring a drain-source voltage rating of 33 volts and a continuous drain current of 80 amperes when properly heat-sunk. It is capable of handling up to 215 watts of power dissipation under controlled conditions. The device is designed for surface mount applications and comes in a D2PAK package, offering robust thermal performance and efficient heat dissipation. It features a gate-source voltage of ±18 volts, a gate threshold voltage of 4 volts at a gate current of 1mA, and a total gate charge of 2500 picofarads at 25 volts, highlighting its suitability for high-power electronic applications.
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