ABR MCRO Logo
Image is for reference only, the actual product serves as the standard.
STB7NK80Z-1N-Channel 800 V 5.2A (Tc) 125W (Tc) Through Hole I2PAK

1:$1.4280

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-STB7NK-925377
ManufacturerSTMicroelectronics
MPN #.STB7NK80Z-1
Estimated Lead Time13 Weeks
SampleGet Free Sample
DatasheetDatasheetST(B,P)7NK80Z(-1,FP)(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 96
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 1.4280
Ext. Price$ 1.4280
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1000$1.4280$1428.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
E-ULN2004AN/A
STMicroelectronics
Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Through Hole 16-DIP
STP100N10F7$1.7520
STMicroelectronics
N-Channel 100 V 80A (Tc) 150W (Tc) Through Hole TO-220
STU2NK100Z$1.9410
STMicroelectronics
N-Channel 1000 V 1.85A (Tc) 70W (Tc) Through Hole IPAK
STU75N3LLH6-SN/A
STMicroelectronics
N-Channel 30 V 75A (Tc) 60W (Tc) Through Hole TO-251 (IPAK)
STW34NB20N/A
STMicroelectronics
N-Channel 200 V 34A (Tc) 180W (Tc) Through Hole TO-247-3
STW69N65M5$7.0440
STMicroelectronics
N-Channel 650 V 58A (Tc) 330W (Tc) Through Hole TO-247-3
STW9NK95Z$2.6060
STMicroelectronics
N-Channel 950 V 7A (Tc) 160W (Tc) Through Hole TO-247-3
Technical Specifications
SeriesSuperMESH™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSTB7NK80
Continuous Drain Current (ID) @ 25°C5.2A (Tc)
Drain-to-Source Voltage (VDS)800 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)56 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1138 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation125W (Tc)
RDS(on) Drain-to-Source On Resistance1.8Ohm @ 2.6A, 10V
Package Type (Mfr.)I2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 100µA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
ST(B,P)7NK80Z(-1,FP)
Other Related Documents
STB7NK80Z-1 View All Specifications
PCN Packaging
Box Label Chg 28/Jul/2016
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STB7NK80Z-1 is a semiconductor device manufactured by STMicroelectronics, designed as an N-channel MOSFET capable of handling voltages up to 800 V and a current of 5.2 A when measured at the case temperature. It is housed in a I2PAK through-hole package, which facilitates easy mounting and thermal management. The device can dissipate up to 125W of power when appropriately cooled. Featuring a gate threshold voltage of 4.5V under a test condition of 100µA, it offers a gate-source voltage tolerance of ±30V and operates optimally with a gate drive voltage of 10V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.