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STB78NF55-08N-Channel 55 V 80A (Tc) 300W (Tc) Surface Mount TO-263 (D2PAK)

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ABRmicro #.ABR2045-STB78N-998717
ManufacturerSTMicroelectronics
MPN #.STB78NF55-08
Estimated Lead Time-
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DatasheetDatasheetSTx78NF55-08(PDF)
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In Stock: 8
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesSTripFET™ II
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberSTB78N
Continuous Drain Current (ID) @ 25°C80A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)155 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3740 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation300W (Tc)
RDS(on) Drain-to-Source On Resistance8mOhm @ 40A, 10V
Package Type (Mfr.)TO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
STx78NF55-08
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STB78NF55-08, manufactured by STMicroelectronics, is a robust N-Channel MOSFET designed for surface mount applications, housed in a TO-263 (D2PAK) package. It features a maximum voltage rating of 55V and can handle a continuous current of up to 80A under specific conditions (Tc). The device offers a power dissipation capacity of 300W, also measured at the case (Tc). Its gate-source threshold voltage is specified at 4V for a 250µA current, showcasing its switching capabilities. With an input capacitance of 3740 pF at 25V and a gate-source voltage tolerance of ±20V, this MOSFET is well-suited for efficient high-power switching tasks.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.