STB76NF75N-Channel 75 V 80A (Tc) 300W (Tc) Surface Mount TO-263 (D2PAK)
1:$1.2570
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ABRmicro #.ABR2045-STB76N-942134
ManufacturerSTMicroelectronics
MPN #.STB76NF75
Estimated Lead Time26 Weeks
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Datasheet
STx76NF75(PDF)
STx76NF75(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.2570
Ext. Price$ 1.2570
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.2570$1.2570
10$1.0890$10.8910
100$0.9900$99.0250
500$0.9480$473.8750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesSTripFET™ II
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSTB76
Continuous Drain Current (ID) @ 25°C80A (Tc)
Drain-to-Source Voltage (VDS)75 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)160 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3700 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation300W (Tc)
RDS(on) Drain-to-Source On Resistance11mOhm @ 40A, 10V
Package Type (Mfr.)TO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
PCN Assembly/Origin
PCN Design/Specification
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STB76NF75 is an N-Channel MOSFET manufactured by STMicroelectronics, designed for high-efficiency performance in various electronic configurations. It features a voltage rating of 75 V and supports a continuous current of 80A when adequately cooled. With a low on-resistance of 11 mOhm at 40A and 10V, this device minimizes power dissipation, making it suitable for power circuits. The MOSFET is encapsulated in a TO-263 (D2PAK) surface mount package, allowing for efficient thermal management. Additional electrical characteristics include a gate charge of 160 nC at 10 V and an input capacitance of 3700 pF at 25 V, facilitating swift switching speeds.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.