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STB45NF06T4N-Channel 60 V 38A (Tc) 80W (Tc) Surface Mount D2PAK

1:$1.2820

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ABRmicro #.ABR2045-STB45N-962339
ManufacturerSTMicroelectronics
MPN #.STB45NF06T4
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetSTB45NF06(PDF)
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In Stock: 14
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
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Unit Price$ 1.2820
Ext. Price$ 1.2820
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Technical Specifications
SeriesSTripFET™ II
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusEnd of Life (EOL)
Base Product NumberSTB45
Continuous Drain Current (ID) @ 25°C38A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)58 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1730 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature175°C (TJ)
Maximum Power Dissipation80W (Tc)
RDS(on) Drain-to-Source On Resistance28mOhm @ 19A, 10V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
STB45NF06
Other Related Documents
STB45NF06 View All Specifications
PCN Assembly/Origin
Mult Devices Testing 10/May/2018
PCN Design/Specification
D2PAK Lead Modification 04/Oct/2013
PCN Obsolescence/ EOL
Mult Dev obs 29/Jan/2024
PCN Packaging
Box Label Chg 28/Jul/2016Mult Dev Inner Box Chg 9/Dec/2021
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STB45NF06T4 is an N-Channel MOSFET manufactured by STMicroelectronics, designed for surface mount applications with a D2PAK package. It operates at a maximum voltage of 60V and can handle continuous currents up to 38A, with a power dissipation of 80W under specified conditions. The MOSFET features a low on-resistance of 28 milliohms at a driving current of 19A and a gate-source voltage of 10V. It also supports a gate-source voltage tolerance of ±20V, making it suitable for a wide range of switching and power applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.