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STB37N60DM2AGN-Channel 600 V 28A (Tc) 210W (Tc) Surface Mount TO-263 (D2PAK)

1:$5.4710

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-STB37N-1034507
ManufacturerSTMicroelectronics
MPN #.STB37N60DM2AG
Estimated Lead Time16 Weeks
SampleGet Free Sample
DatasheetDatasheetSTB37N60DM2AG(PDF)
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In Stock: 2070
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 5.4710
Ext. Price$ 5.4710
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$5.4710$5.4710
10$4.6890$46.8880
100$3.9080$390.7880
500$3.4470$1723.3750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesMDmesh™ DM2
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSTB37
Continuous Drain Current (ID) @ 25°C28A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)54 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2400 pF @ 100 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation210W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance110mOhm @ 14A, 10V
Package Type (Mfr.)TO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
STB37N60DM2AG
PCN Assembly/Origin
Mult Devices 27/Feb/2019
PCN Packaging
Carrier tape design improvement 05/Mar/2024Mult Dev Inner Box Chg 9/Dec/2021
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STB37N60DM2AG is a semiconductor device manufactured by STMicroelectronics, designed as an N-channel MOSFET with a voltage rating of 600 V and a current rating of 28A when measured under specific conditions (Tc). It has a high power dissipation capacity of 210W, also under specific thermal conditions (Tc), making it suitable for demanding applications where efficient power handling is essential. The device is encapsulated in a TO-263 (D2PAK) surface-mount package, which aids in its compact footprint and efficient thermal management. Additionally, it features a capacitance of 2400 pF at 100 V, further defining its electrical characteristics.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.