STB36NM60NN-Channel 600 V 29A (Tc) 210W (Tc) Surface Mount TO-263 (D2PAK)
1:$3.9830
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ABRmicro #.ABR2045-STB36N-1036372
ManufacturerSTMicroelectronics
MPN #.STB36NM60N
Estimated Lead Time-
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Datasheet
STB36NM60N(PDF)
STB36NM60N(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 3.9830
Ext. Price$ 3.9830
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$3.9830$3.9830
10$3.4120$34.1170
100$2.9440$294.4190
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesMDmesh™ II
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberSTB36
Continuous Drain Current (ID) @ 25°C29A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)83.6 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2722 pF @ 100 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation210W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance105mOhm @ 14.5A, 10V
Package Type (Mfr.)TO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
Other Related Documents
PCN Assembly/Origin
PCN Design/Specification
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STB36NM60N is an N-channel MOSFET manufactured by STMicroelectronics designed for high-efficiency power switching applications. It features a maximum drain-source voltage of 600V and can handle a continuous drain current of up to 29A (when mounted on a suitable heatsink). It is capable of dissipating up to 210W of power under typical conditions. The MOSFET comes in a surface mount TO-263 (D2PAK) package, making it suitable for compact circuit designs. Additionally, it has an input capacitance of 2722 pF measured at 100V, an on-resistance of 105 milliOhms at 14.5A and 10V gate drive, and it can tolerate gate-to-source voltages of up to ±25V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.