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STB36NF06LT4N-Channel 60 V 30A (Tc) 70W (Tc) Surface Mount D2PAK

1:$1.4280

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ABRmicro #.ABR2045-STB36N-921344
ManufacturerSTMicroelectronics
MPN #.STB36NF06LT4
Estimated Lead Time26 Weeks
SampleGet Free Sample
DatasheetDatasheetST(B,P)36NF06L(PDF)
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In Stock: 95
Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 15, 2024
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Unit Price$ 1.4280
Ext. Price$ 1.4280
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Qty.Unit PriceExt. Price
1$1.4280$1.4280
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesSTripFET™ II
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSTB36
Continuous Drain Current (ID) @ 25°C30A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)17 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)660 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation70W (Tc)
RDS(on) Drain-to-Source On Resistance40mOhm @ 15A, 10V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±18V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
ST(B,P)36NF06L
PCN Packaging
Mult Dev Inner Box Chg 9/Dec/2021
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STB36NF06LT4 is an N-Channel MOSFET developed by STMicroelectronics, designed to handle up to 60V and 30A of current, with a power dissipation capacity of 70W under specified conditions. It comes housed in a surface mount D2PAK package, making it suitable for automated assembly processes. This MOSFET has a gate threshold voltage range of ±18V, and it operates effectively with gate-source voltages of 5V and 10V. Its structure and specifications make it robust for various electronic applications requiring efficient switching and amplification characteristics.
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