STB35N60DM2N-Channel 600 V 28A (Tc) 210W (Tc) Surface Mount TO-263 (D2PAK)
1:$4.9240
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ABRmicro #.ABR2045-STB35N-1029570
ManufacturerSTMicroelectronics
MPN #.STB35N60DM2
Estimated Lead Time16 Weeks
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Datasheet
STB35N60DM2(PDF)
STB35N60DM2(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 4.9240
Ext. Price$ 4.9240
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$4.9240$4.9240
10$4.1360$41.3630
100$3.3460$334.5810
500$2.9740$1486.9690
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesMDmesh™ DM2
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSTB35
Continuous Drain Current (ID) @ 25°C28A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)54 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2400 pF @ 100 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation210W (Tc)
RDS(on) Drain-to-Source On Resistance110mOhm @ 14A, 10V
Package Type (Mfr.)TO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STB35N60DM2 is an N-Channel MOSFET manufactured by STMicroelectronics, featuring a voltage rating of 600V and current capability of 28A at the case temperature (Tc). This component is designed for surface mount with a TO-263 (D2PAK) package, facilitating integration into compact designs. It delivers a substantial power dissipation of 210W at Tc, ensuring robust performance in various conditions. The MOSFET exhibits a capacitance of 2400 pF at 100V and a gate-source threshold voltage of 5V at a drain current of 250µA, highlighting its responsive electrical characteristics.
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