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STB30NM50NN-Channel 500 V 27A (Tc) 190W (Tc) Surface Mount D2PAK

N/A

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ABRmicro #.ABR2045-STB30N-914091
ManufacturerSTMicroelectronics
MPN #.STB30NM50N
Estimated Lead Time-
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DatasheetDatasheetSTx30NM50N(PDF)
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In Stock: 7
Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
Tape & Reel (TR)Cut Tape (CT)
Shipping DateNovember 13, 2024
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Technical Specifications
SeriesMDmesh™ II
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Lifecycle StatusObsolete
Base Product NumberSTB30N
Continuous Drain Current (ID) @ 25°C27A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)94 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2740 pF @ 50 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation190W (Tc)
RDS(on) Drain-to-Source On Resistance115mOhm @ 13.5A, 10V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
STx30NM50N
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)