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STB28N60DM2N-Channel 600 V 21A (Tc) 170W (Tc) Surface Mount TO-263 (D2PAK)
1:$2.8460
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ABRmicro #.ABR2045-STB28N-989077
ManufacturerSTMicroelectronics
MPN #.STB28N60DM2
Estimated Lead Time16 Weeks
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DatasheetST(B,P,W)28N60DM2(PDF)
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In Stock: 534
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 2.8460
Ext. Price$ 2.8460
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.8460$2.8460
10$2.3900$23.8960
100$1.9330$193.2690
500$1.7180$859.0310
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSTB28
Continuous Drain Current (ID) @ 25°C21A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)34 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1500 pF @ 100 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation170W (Tc)
RDS(on) Drain-to-Source On Resistance160mOhm @ 10.5A, 10V
Package Type (Mfr.)TO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
PCN Assembly/Origin
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STB28N60DM2 is a MOSFET manufactured by STMicroelectronics, featuring an N-Channel configuration designed to handle high voltages and currents. It operates at a voltage rating of 600 V, with a continuous drain current of 21A. Encased in a robust TO-263 (D2PAK) surface mount package, it can dissipate 170W of power under specified conditions. The MOSFET exhibits a low on-state resistance of 160mOhm when a gate voltage of 10V is applied, optimizing its efficiency in switching applications. Additionally, it requires a gate threshold voltage of 5V to conduct a drain-source current of 250µA.
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