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STB26N60M2N-Channel 600 V 20A (Tc) 169W (Tc) Surface Mount D2PAK

1:$2.5650

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-STB26N-979937
ManufacturerSTMicroelectronics
MPN #.STB26N60M2
Estimated Lead Time16 Weeks
SampleGet Free Sample
DatasheetDatasheetSTB26N60M2 Datasheet(PDF)
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In Stock: 13
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 2.5650
Ext. Price$ 2.5650
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.5650$2.5650
10$2.1520$21.5160
100$1.7400$174.0380
500$1.5470$773.5000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesMDmesh™ M2
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSTB26
Continuous Drain Current (ID) @ 25°C20A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)34 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1360 pF @ 100 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation169W (Tc)
RDS(on) Drain-to-Source On Resistance165mOhm @ 10A, 10V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
STB26N60M2 Datasheet
PCN Packaging
Carrier tape design improvement 05/Mar/2024Mult Dev Inner Box Chg 9/Dec/2021
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STB26N60M2 by STMicroelectronics is an N-Channel MOSFET designed for high-efficiency power handling applications. It can withstand a maximum voltage of 600 V and supports a continuous current of up to 20A under specific thermal conditions, such as a case temperature. Housed in a surface-mount D2PAK package, this MOSFET provides ease of integration into various surface-mount designs. With a power dissipation capacity of 169W (also at case temperature) and a gate-source voltage threshold of ±25V, it offers robust performance suited for demanding environments. Additionally, it exhibits a typical input capacitance of 1360 pF at 100 V, signaling good switching performance characteristics.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.