STB23NM50NN-Channel 500 V 17A (Tc) 125W (Tc) Surface Mount TO-263 (D2PAK)
1:$4.0180
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-STB23N-930841
ManufacturerSTMicroelectronics
MPN #.STB23NM50N
Estimated Lead Time14 Weeks
SampleGet Free Sample
Datasheet
STx23NM50N(PDF)
STx23NM50N(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed AuthenticityTechnical SupportFast RefundFree Shipping (over $960)Issue an Invoice24/7 Manual Service In Stock: 15
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 4.0180
Ext. Price$ 4.0180
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$4.0180$4.0180
10$3.3710$33.7130
100$2.7260$272.6380
500$2.4240$1211.7810
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
E-ULN2004AN/A
Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Through Hole 16-DIP
Technical Specifications
SeriesMDmesh™ II
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSTB23
Continuous Drain Current (ID) @ 25°C17A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)45 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1330 pF @ 50 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation125W (Tc)
RDS(on) Drain-to-Source On Resistance190mOhm @ 8.5A, 10V
Package Type (Mfr.)TO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desire
info@Abrmicro.com
info@Abrmicro.comExtended Links
Datasheets
Other Related Documents
PCN Assembly/Origin
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STB23NM50N is an N-channel power MOSFET manufactured by STMicroelectronics, designed for surface mount applications in a TO-263 (D2PAK) package. It is capable of withstanding a maximum drain-source voltage of 500V and supports a continuous drain current of 17A when fully enhanced at its case temperature. This MOSFET features a relatively low on-state resistance of 190mOhm at an 8.5A current and a gate-source voltage of 10V, ensuring efficient operation. It also exhibits a gate threshold voltage of 4V at a gate current of 250µA and has a power dissipation capacity of 125W at the case temperature, making it suitable for high-power applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.