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STB22NS25ZT4N-Channel 250 V 22A (Tc) 135W (Tc) Surface Mount D2PAK

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ABRmicro #.ABR2045-STB22N-1000034
ManufacturerSTMicroelectronics
MPN #.STB22NS25ZT4
Estimated Lead Time-
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DatasheetDatasheetST(B,P)22NS25Z(PDF)
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In Stock: 16
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesMESH OVERLAY™
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberSTB22N
Continuous Drain Current (ID) @ 25°C22A (Tc)
Drain-to-Source Voltage (VDS)250 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)151 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2400 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation135W (Tc)
RDS(on) Drain-to-Source On Resistance150mOhm @ 11A, 10V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
ST(B,P)22NS25Z
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STB22NS25ZT4 is an N-Channel MOSFET manufactured by STMicroelectronics, designed for high-efficiency power switching applications. It operates with a drain-source voltage rating of 250V and can handle a continuous drain current of 22A, with a power dissipation capacity of 135W under specified conditions. This surface-mount component is housed in the D2PAK package, featuring a low gate charge of 151 nC when driven at 10V, and a drain-source on-resistance of 150mOhm at a specified current and voltage. The device is capable of withstanding gate-source voltage excursions up to ±20V, making it suitable for robust electrical designs.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.