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STB20NM60DN-Channel 600 V 20A (Tc) 192W (Tc) Surface Mount D2PAK

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ABRmicro #.ABR2045-STB20N-1009017
ManufacturerSTMicroelectronics
MPN #.STB20NM60D
Estimated Lead Time-
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DatasheetDatasheetSTB20NM60D(PDF)
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In Stock: 5
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesFDmesh™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberSTB20
Continuous Drain Current (ID) @ 25°C20A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)52 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1300 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature-65°C ~ 150°C (TJ)
Maximum Power Dissipation192W (Tc)
RDS(on) Drain-to-Source On Resistance290mOhm @ 10A, 10V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
STB20NM60D
Other Related Documents
STB20NM60D View All Specifications
PCN Assembly/Origin
Mult Devices 27/Feb/2019
PCN Design/Specification
D2PAK Lead Modification 04/Oct/2013IPG-PWR/14/8422 11/Apr/2014
PCN Obsolescence/ EOL
DK OBS NOTICE
PCN Packaging
Mult Dev Inner Box Chg 9/Dec/2021
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STB20NM60D is a surface mount N-Channel MOSFET manufactured by STMicroelectronics, designed to handle voltages up to 600 V and currents of 20 A when operating at its maximum case temperature. Encapsulated in a D2PAK package, this MOSFET offers a power dissipation capacity of 192 W. With a gate charge of 52 nC at 10 V, it supports a gate-to-source voltage of ±30 V, making it suitable for various high-power switching applications where a compact and efficient solid-state device is required.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.