STB20N95K5N-Channel 950 V 17.5A (Tc) 250W (Tc) Surface Mount D2PAK
1:$6.5140
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ABRmicro #.ABR2045-STB20N-962344
ManufacturerSTMicroelectronics
MPN #.STB20N95K5
Estimated Lead Time14 Weeks
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Datasheet
STx20N95K5(PDF)
STx20N95K5(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 6.5140
Ext. Price$ 6.5140
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$6.5140$6.5140
10$5.5810$55.8130
100$4.6520$465.1630
500$4.1040$2052.2190
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesSuperMESH5™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSTB20
Continuous Drain Current (ID) @ 25°C17.5A (Tc)
Drain-to-Source Voltage (VDS)950 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)40 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1500 pF @ 100 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation250W (Tc)
RDS(on) Drain-to-Source On Resistance330mOhm @ 9A, 10V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 100µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
Other Related Documents
PCN Assembly/Origin
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STB20N95K5 by STMicroelectronics is an N-channel MOSFET characterized by a high voltage threshold of 950 V and a drain current of 17.5A under specified conditions. It features a low on-state resistance of 330 mOhm at 9A, making it suitable for efficient power management tasks. This MOSFET can handle significant power dissipation, with a maximum rating of 250W. The device is designed for surface mounting in the compact D2PAK package, which supports efficient heat dissipation. It also offers a gate threshold voltage of 10V and a gate-source voltage tolerance of ±30V, enhancing its operational stability and reliability.
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