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STB18NM80N-Channel 800 V 17A (Tc) 190W (Tc) Surface Mount TO-263 (D2PAK)

1:$3.8720

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-STB18N-985338
ManufacturerSTMicroelectronics
MPN #.STB18NM80
Estimated Lead Time13 Weeks
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DatasheetDatasheetSTx18NM80(PDF)
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In Stock: 7000
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 3.8720
Ext. Price$ 3.8720
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$3.8720$3.8720
10$3.2540$32.5440
100$2.6330$263.2880
500$2.3400$1169.8130
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesMDmesh™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSTB18
Continuous Drain Current (ID) @ 25°C17A (Tc)
Drain-to-Source Voltage (VDS)800 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)70 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2070 pF @ 50 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation190W (Tc)
RDS(on) Drain-to-Source On Resistance295mOhm @ 8.5A, 10V
Package Type (Mfr.)TO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
STx18NM80
Other Related Documents
STB18NM80 View All Specifications
PCN Design/Specification
D2PAK Lead Modification 04/Oct/2013
PCN Packaging
Carrier tape design improvement 05/Mar/2024Mult Dev Inner Box Chg 9/Dec/2021
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STB18NM80 is an N-channel MOSFET manufactured by STMicroelectronics, designed for high voltage and current handling capabilities. It can support a drain-source breakdown voltage of 800V and a continuous drain current of 17A under case temperature conditions. The device is capable of dissipating up to 190W of power. It features a total gate charge of 70 nC at 10 V, and a gate-source voltage rating of ±25V, reflecting its robustness in handling voltage spikes. The STB18NM80 comes in a TO-263 (D2PAK) surface mount package, which offers ease of installation on printed circuit boards for efficient space utilization.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.