STB18NF25N-Channel 250 V 17A (Tc) 110W (Tc) Surface Mount TO-263 (D2PAK)
1:$1.5050
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-STB18N-972114
ManufacturerSTMicroelectronics
MPN #.STB18NF25
Estimated Lead Time14 Weeks
SampleGet Free Sample
Datasheet
ST(B,D)18NF25(PDF)
ST(B,D)18NF25(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed AuthenticityTechnical SupportFast RefundFree Shipping (over $960)Issue an Invoice24/7 Manual Service In Stock: 925
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.5050
Ext. Price$ 1.5050
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.5050$1.5050
10$1.2520$12.5160
100$0.9970$99.6630
500$0.8440$421.8130
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
E-ULN2004AN/A
Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Through Hole 16-DIP
Technical Specifications
SeriesSTripFET™ II
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSTB18
Continuous Drain Current (ID) @ 25°C17A (Tc)
Drain-to-Source Voltage (VDS)250 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)29.5 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1000 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation110W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance165mOhm @ 8.5A, 10V
Package Type (Mfr.)TO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desire
info@Abrmicro.com
info@Abrmicro.comExtended Links
Datasheets
Other Related Documents
PCN Assembly/Origin
PCN Design/Specification
Video File
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STB18NF25 is an N-channel MOSFET manufactured by STMicroelectronics, designed for high voltage applications with a breakdown voltage of 250 V. It can conduct a continuous current of up to 17A when properly mounted and dissipates a maximum power of 110 W. Housed in a TO-263 (D2PAK) surface-mount package, this MOSFET features a gate charge of 29.5 nC at 10 V, along with a gate threshold voltage of 4 V at a drain current of 250 µA. The device is optimized for efficient switching with a gate-source operating voltage of 10 V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.