ABR MCRO Logo
Image is for reference only, the actual product serves as the standard.
STB180N55F3N-Channel 55 V 120A (Tc) 330W (Tc) Surface Mount D2PAK

1:$5.4030

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-STB180-968585
ManufacturerSTMicroelectronics
MPN #.STB180N55F3
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetST(B,P)180N55F3(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 1518
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 5.4030
Ext. Price$ 5.4030
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$5.4030$5.4030
10$4.5400$45.4010
100$3.6720$367.2000
500$3.2640$1632.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
E-ULN2004AN/A
STMicroelectronics
Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Through Hole 16-DIP
STP100N10F7$1.7520
STMicroelectronics
N-Channel 100 V 80A (Tc) 150W (Tc) Through Hole TO-220
STU2NK100Z$1.9410
STMicroelectronics
N-Channel 1000 V 1.85A (Tc) 70W (Tc) Through Hole IPAK
STU75N3LLH6-SN/A
STMicroelectronics
N-Channel 30 V 75A (Tc) 60W (Tc) Through Hole TO-251 (IPAK)
STW34NB20N/A
STMicroelectronics
N-Channel 200 V 34A (Tc) 180W (Tc) Through Hole TO-247-3
STW69N65M5$7.0440
STMicroelectronics
N-Channel 650 V 58A (Tc) 330W (Tc) Through Hole TO-247-3
STW9NK95Z$2.6060
STMicroelectronics
N-Channel 950 V 7A (Tc) 160W (Tc) Through Hole TO-247-3
Technical Specifications
SeriesSTripFET™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberSTB180N
Continuous Drain Current (ID) @ 25°C120A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)100 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)6800 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation330W (Tc)
RDS(on) Drain-to-Source On Resistance3.5mOhm @ 60A, 10V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
ST(B,P)180N55F3
PCN Obsolescence/ EOL
Power MOSFET Transistors 29/Jul/2013
Video File
Motor Control in Electric Vehicles
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STB180N55F3 is an N-channel power MOSFET manufactured by STMicroelectronics, designed for efficient switching applications. It operates effectively at a voltage of 55V and a current of 120A (Tc), with a power dissipation capability of 330W (Tc) in a surface-mount D2PAK package. The MOSFET exhibits a low on-state resistance of 3.5 mOhm at 60A and 10V, ensuring minimal power loss during operation. It has a gate charge of 100 nC at 10V, allowing for fast switching, and a threshold voltage of 4V at a gate current of 250µA, contributing to its overall performance and reliability in various electronic circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.