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STB15NM65NN-Channel 650 V 12A (Tc) 150W (Tc) Surface Mount D2PAK
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ABRmicro #.ABR2045-STB15N-972066
ManufacturerSTMicroelectronics
MPN #.STB15NM65N
Estimated Lead Time-
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DatasheetSTx15NM65N(PDF)
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In Stock: 9
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Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
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Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberSTB15N
Continuous Drain Current (ID) @ 25°C12A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)55 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1900 pF @ 50 V
MfrSTMicroelectronics
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation150W (Tc)
RDS(on) Drain-to-Source On Resistance270mOhm @ 7.75A, 10V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STB15NM65N is a semiconductor component manufactured by STMicroelectronics designed for efficient power handling. It is an N-Channel MOSFET featuring a 650 V drain-to-source voltage and a continuous drain current of 12A under specified conditions as measured at the case temperature (Tc). The component is capable of dissipating up to 150W of power under maximum Tc. Housed in a surface mount D2PAK package, it offers an on-state resistance of 270 milliohms at a gate-source voltage of 10V and a drain current of 7.75A. The device exhibits a threshold voltage of 4V when the gate draws a current of 250µA.
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