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STB10NK60Z-1N-Channel 600 V 10A (Tc) 115W (Tc) Through Hole I2PAK

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ABRmicro #.ABR2045-STB10N-1013419
ManufacturerSTMicroelectronics
MPN #.STB10NK60Z-1
Estimated Lead Time-
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DatasheetDatasheetSTx10NK60Z(PDF)
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In Stock: 16
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesSuperMESH™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSTB10N
Continuous Drain Current (ID) @ 25°C10A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)70 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1370 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation115W (Tc)
RDS(on) Drain-to-Source On Resistance750mOhm @ 4.5A, 10V
Package Type (Mfr.)I2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 250µA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
STx10NK60Z
Other Related Documents
STB10NK60Z View All Specifications
PCN Obsolescence/ EOL
Mult Dev OBS 3/Jul/2020
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The STB10NK60Z-1 from STMicroelectronics is an N-channel MOSFET designed for high-voltage applications. It features a voltage rating of 600 V and can deliver a continuous current of 10A, with a power dissipation capability of 115W when adequately mounted. The device is housed in a through-hole I2PAK package, making it suitable for manual assembly on printed circuit boards. It also offers a gate-to-source voltage tolerance of ±30V and a gate charge capacitance of 1370 pF at 25 V. This MOSFET operates with a gate threshold voltage of 10V, enabling efficient switching performance.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.