BUZ10N-Channel 50 V 23A (Tc) 75W (Tc) Through Hole TO-220
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ABRmicro #.ABR2045-BUZ10-988723
ManufacturerSTMicroelectronics
MPN #.BUZ10
Estimated Lead Time-
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Datasheet
BUZ10(PDF)
BUZ10(PDF)
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Shipping DateNovember 16, 2024
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Technical Specifications
SeriesSTripFET™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberBUZ10
Continuous Drain Current (ID) @ 25°C23A (Tc)
Drain-to-Source Voltage (VDS)50 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)900 pF @ 25 V
MfrSTMicroelectronics
Mounting StyleThrough Hole
Operating Temperature175°C (TJ)
Maximum Power Dissipation75W (Tc)
RDS(on) Drain-to-Source On Resistance70mOhm @ 14A, 10V
Package Type (Mfr.)TO-220
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseTO-220-3
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Datasheets
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Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BUZ10, manufactured by STMicroelectronics, is an N-Channel MOSFET distinguished by its ability to handle voltages up to 50V and currents up to 23A, making it suitable for high-power applications. Encased in a standard TO-220 package, this MOSFET dissipates up to 75W under optimal thermal conditions (Tc), and features an input capacitance of 900 pF at 25V which influences its switching performance. With a low on-state resistance of 70mOhm when carrying 14A of current at 10V, the BUZ10 efficiently manages power with minimal loss, supporting robust and reliable performance in its designated use cases.
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