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UMZ1NFHATRBipolar (BJT) Transistor Array 1 NPN, 1 PNP 50V 150mA 180MHz, 140MHz 150mW Surface Mount UMT6

1:$0.4020

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ABRmicro #.ABR277-UMZ1NF-129402
ManufacturerRohm Semiconductor
MPN #.UMZ1NFHATR
Estimated Lead Time18 Weeks
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DatasheetDatasheetUMZ1NFHATR (PDF)
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In Stock: 3412
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateDecember 24, 2024
* Quantity
Unit Price$0.4020
Ext. Price$0.4020
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.4020$0.4020
10$0.2830$2.8260
100$0.1430$14.3440
500$0.1260$63.2190
1000$0.0990$98.8130
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberUMZ1
Collector Current (Iᴄ)@25°C150mA
Collector Cut-off Current (Iᴄᴇs)(Max.)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA, 6V
Frequency - Transition180MHz, 140MHz
GradeAutomotive
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Power - Max150mW
QualificationAEC-Q101
Package Type (Mfr.)UMT6
Transistor Type1 NPN, 1 PNP
Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
Collector-Emitter Breakdown Voltage (Max.)50V
Package / Case6-TSSOP, SC-88, SOT-363
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
UMZ1NFHATR
Other Related Documents
Anti-Whisker Info for TransistorsPart No. Explanation, Transistors
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0075 (With an operating frequency not less than 100 MHz; No import duty applies)
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Additional Details
The part number UMZ1NFHATR from Rohm Semiconductor is a bipolar junction transistor (BJT) array featuring one NPN and one PNP transistor within a compact surface mount UMT6 package. It is designed to handle a maximum collector-emitter voltage of 50V and a continuous collector current of 150mA. The device operates at frequencies up to 180MHz for the NPN and 140MHz for the PNP, with a power dissipation capacity of 150mW. Key electrical characteristics include a voltage drop of 400mV at 5mA and 50mA, and a gain of 120 at 1mA, 6V, making it suitable for automotive applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.