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RU1L002SNTLN-Channel 60 V 250mA (Ta) 200mW (Ta) Surface Mount UMT3F
1:$0.2180
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-RU1L00-210566
ManufacturerRohm Semiconductor
MPN #.RU1L002SNTL
Estimated Lead Time21 Weeks
SampleGet Free Sample
DatasheetRU1L002SNTL(PDF)
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In Stock: 14820
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 7, 2024
* Quantity
Unit Price$ 0.2180
Ext. Price$ 0.2180
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.2180$0.2180
10$0.1500$1.5000
100$0.0730$7.3000
500$0.0600$30.0000
1000$0.0420$42.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 MHz 150 mW Surface Mount VMT3 Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberRU1L002
Continuous Drain Current (ID) @ 25°C250mA (Ta)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))2.5V, 10V
FET Feature-
FET TypeN-Channel
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)15 pF @ 25 V
MfrRohm Semiconductor
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation200mW (Ta)
RDS(on) Drain-to-Source On Resistance2.4Ohm @ 250mA, 10V
Package Type (Mfr.)UMT3F
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.3V @ 1mA
Package / CaseSC-85
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)