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RS1E300GNTBN-Channel 30 V 30A (Ta), 80A (Tc) 3W (Ta), 33W (Tc) Surface Mount 8-HSOP

1:$0.3860

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ABRmicro #.ABR2045-RS1E30-1013577
ManufacturerRohm Semiconductor
MPN #.RS1E300GNTB
Estimated Lead Time-
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In Stock: 114
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.3860
Ext. Price$ 0.3860
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
2500$0.3860$964.2190
5000$0.3680$1838.1250
12500$0.3510$4382.8130
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusNRND(Not Recommended for New Designs)
Base Product NumberRS1E
Continuous Drain Current (ID) @ 25°C30A (Ta), 80A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)39.8 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2500 pF @ 15 V
MfrRohm Semiconductor
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation3W (Ta), 33W (Tc)
RDS(on) Drain-to-Source On Resistance2.2mOhm @ 30A, 10V
Package Type (Mfr.)8-HSOP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 1mA
Package / Case8-PowerTDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The RS1E300GNTB is an N-Channel MOSFET manufactured by Rohm Semiconductor, designed for surface mount applications with an 8-HSOP package. It operates at a voltage of up to 30V and can handle currents of 30A when used in free air (Ta) and up to 80A with proper case mounting (Tc). The device also exhibits a power dissipation capability of 3W in free air and 33W with a suitable heat sink. It features gate-source voltage parameters of 2.5V @ 1mA, and performance at gate voltages of 4.5V and 10V, with a total gate charge of 39.8 nC at 10V, making it a suitable choice for applications requiring efficient power handling in a compact form factor.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.