RHK003N06FRAT146N-Channel 60 V 300mA (Ta) 200mW (Ta) Surface Mount SMT3
1:$0.3930
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ABRmicro #.ABR278-RHK003-64694
ManufacturerRohm Semiconductor
MPN #.RHK003N06FRAT146
Estimated Lead Time21 Weeks
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Datasheet
RHK003N06FRAT14... (PDF)
RHK003N06FRAT14... (PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateDecember 23, 2024
* Quantity
Unit Price$0.3930
Ext. Price$0.3930
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.3930$0.3930
10$0.3030$3.0280
100$0.1820$18.1690
500$0.1680$83.9380
1000$0.1150$114.7500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberRHK003
Continuous Drain Current (ID) @ 25°C300mA (Ta)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)6 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)33 pF @ 10 V
MfrRohm Semiconductor
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation200mW (Ta)
RDS(on) Drain-to-Source On Resistance1Ohm @ 300mA, 10V
Package Type (Mfr.)SMT3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 1mA
Package / CaseTO-236-3, SC-59, SOT-23-3
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
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Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 MHz 150 mW Surface Mount VMT3
Additional Details
The RHK003N06FRAT146 from Rohm Semiconductor is an N-channel MOSFET designed for surface mount applications, housed in an SMT3 package. It is capable of handling a maximum voltage of 60 V and delivering up to 300 mA of current at room temperature. The device can dissipate up to 200 mW of power and features threshold voltages of 4 V and 10 V. It also has a gate-source capacitance of 33 pF when assessed at 10 V. This MOSFET is suitable for compact and efficient designs where low power consumption and moderate current handling are desired.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.