RCJ050N25TLN-Channel 250 V 5A (Tc) 1.56W (Ta), 30W (Tc) Surface Mount LPTS
1:$0.3790
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-RCJ050-1007834
ManufacturerRohm Semiconductor
MPN #.RCJ050N25TL
Estimated Lead Time21 Weeks
SampleGet Free Sample
Datasheet
LPTS TL Taping Spec(PDF)
LPTS TL Taping Spec(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed AuthenticityTechnical SupportFast RefundFree Shipping (over $960)Issue an Invoice24/7 Manual Service In Stock: 65
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.3790
Ext. Price$ 0.3790
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1000$0.3790$379.3130
2000$0.3570$714.0000
5000$0.3400$1700.0000
10000$0.3240$3240.6250
25000$0.3230$8075.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
DTA013ZMT2L$0.2320
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 MHz 150 mW Surface Mount VMT3DTA114EMFHAT2L$0.2320
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 MHz 150 mW Surface Mount VMT3
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusActive
Base Product NumberRCJ050
Continuous Drain Current (ID) @ 25°C5A (Tc)
Drain-to-Source Voltage (VDS)250 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)8.5 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)350 pF @ 25 V
MfrRohm Semiconductor
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation1.56W (Ta), 30W (Tc)
RDS(on) Drain-to-Source On Resistance1.36Ohm @ 2.5A, 10V
Package Type (Mfr.)LPTS
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5.5V @ 1mA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desire
info@Abrmicro.com
info@Abrmicro.comExtended Links
Datasheets
Design Resources
Environmental Information
Other Related Documents
Reliability Documents
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The RCJ050N25TL is an N-channel MOSFET manufactured by Rohm Semiconductor, designed for high-efficiency power management solutions. It operates at a maximum voltage of 250 V and can handle a continuous current of 5A when properly mounted to a heat sink (Tc conditions) and a power dissipation of 1.56W in free air (Ta) or up to 30W with a heat sink (Tc). The device offers a gate threshold voltage of 5.5V at 1mA and is housed in a low-profile surface mount LPTS package. It supports a gate-source voltage range of ±30V, making it suitable for various switching applications that require reliable high-voltage performance.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.