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R6524ENJTLN-Channel 650 V 24A (Tc) 245W (Tc) Surface Mount LPTS
1:$5.4710
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ABRmicro #.ABR278-R6524E-78059
ManufacturerRohm Semiconductor
MPN #.R6524ENJTL
Estimated Lead Time23 Weeks
SampleGet Free Sample
DatasheetR6524ENJTL (PDF)
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In Stock: 65
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateDecember 23, 2024
* Quantity
Unit Price$5.4710
Ext. Price$5.4710
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$5.4710$5.4710
10$4.6890$46.8880
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberR6524
Continuous Drain Current (ID) @ 25°C24A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)70 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1650 pF @ 25 V
MfrRohm Semiconductor
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation245W (Tc)
RDS(on) Drain-to-Source On Resistance185mOhm @ 11.3A, 10V
Package Type (Mfr.)LPTS
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 750µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 MHz 150 mW Surface Mount VMT3 Additional Details
The R6524ENJTL, manufactured by Rohm Semiconductor, is an N-Channel Power MOSFET designed for efficient power management and high-performance switching. It operates with a drain-source voltage rating of 650 V and can handle a continuous current of 24A under specific conditions. This MOSFET is capable of handling significant power dissipation with a maximum rating of 245W. It features surface mount technology for efficient thermal management and compact design, making it suitable for space-constrained environments. The device has a gate-source voltage tolerance of ±20V and a capacitance of 1650 pF at 25 V, with a gate threshold voltage of 4V at 750µA.
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