R6504KNJTLN-Channel 650 V 4A (Tc) 58W (Tc) Surface Mount LPTS
1:$1.9580
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ABRmicro #.ABR278-R6504K-91942
ManufacturerRohm Semiconductor
MPN #.R6504KNJTL
Estimated Lead Time23 Weeks
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Datasheet
R6504KNJTL (PDF)
R6504KNJTL (PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateDecember 23, 2024
* Quantity
Unit Price$1.9580
Ext. Price$1.9580
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.9580$1.9580
10$1.6250$16.2460
100$1.2930$129.3060
500$1.0940$547.1880
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberR6504
Continuous Drain Current (ID) @ 25°C4A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)10 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)270 pF @ 25 V
MfrRohm Semiconductor
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation58W (Tc)
RDS(on) Drain-to-Source On Resistance1.05Ohm @ 1.5A, 10V
Package Type (Mfr.)LPTS
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 130µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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Additional Details
The R6504KNJTL is an N-channel MOSFET manufactured by Rohm Semiconductor. It is designed to handle a maximum voltage of 650 V and a continuous current of 4A under the conditions specified at the case temperature (Tc). The part features a power dissipation of 58W at Tc. It comes in a surface-mount package suitable for compact electronic designs. The MOSFET has an input capacitance of 270 pF at 25 V, with a gate-source voltage rating of 10V, making it suitable for efficient switching in high-voltage applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.