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R6047ENZ4C13N-Channel 600 V 47A (Tc) 481W (Tc) Through Hole TO-247
1:$9.1190
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-R6047E-195303
ManufacturerRohm Semiconductor
MPN #.R6047ENZ4C13
Estimated Lead Time18 Weeks
SampleGet Free Sample
DatasheetR6047ENZ4C13(PDF)
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In Stock: 6
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 7, 2024
* Quantity
Unit Price$ 9.1190
Ext. Price$ 9.1190
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
30$9.1190$273.5700
90$8.5830$772.4700
300$8.3140$2494.2000
750$7.7780$5833.5000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 MHz 150 mW Surface Mount VMT3 Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Base Product NumberR6047
Continuous Drain Current (ID) @ 25°C47A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)145 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3850 pF @ 25 V
MfrRohm Semiconductor
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation481W (Tc)
RDS(on) Drain-to-Source On Resistance72mOhm @ 25.8A, 10V
Package Type (Mfr.)TO-247
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseTO-247-3
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)