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R6035ENZC17N-Channel 600 V 35A (Tc) 120W (Tc) Through Hole TO-3PF

1:$2.1970

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ABRmicro #.ABR278-R6035E-112130
ManufacturerRohm Semiconductor
MPN #.R6035ENZC17
Estimated Lead Time23 Weeks
SampleGet Free Sample
DatasheetDatasheetR6035ENZC17 (PDF)
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In Stock: 186
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateDecember 23, 2024
* Quantity
Unit Price$2.1970
Ext. Price$2.1970
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.1970$2.1970
30$1.7410$52.2430
120$1.4930$179.1380
510$1.4610$745.0780
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Base Product NumberR6035
Continuous Drain Current (ID) @ 25°C35A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)110 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2720 pF @ 25 V
MfrRohm Semiconductor
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation120W (Tc)
RDS(on) Drain-to-Source On Resistance102mOhm @ 18.1A, 10V
Package Type (Mfr.)TO-3PF
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseTO-3P-3 Full Pack
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
R6035ENZC17
Video File
4th Gen Super Junction MOSFETs R60xxYNxPresto MOS R600xVNx Series
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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Additional Details
The R6035ENZC17 is a discrete semiconductor component manufactured by Rohm Semiconductor. It is an N-channel MOSFET designed for power management applications, featuring a maximum drain-source voltage of 600 volts and a continuous drain current of 35 amps when operating at case temperature. The MOSFET is housed in a TO-3PF through-hole package, which provides effective thermal performance with a power dissipation capability of up to 120 watts under specified conditions. It operates with a gate-source threshold voltage of 4 volts at 1 mA and exhibits a low on-resistance of 102 milliohms at 18.1 amps with a gate voltage of 10 volts, making it suitable for efficient switching operations.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.