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R6030KNZC17N-Channel 600 V 30A (Tc) 86W (Tc) Through Hole TO-3PF

1:$6.1980

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ABRmicro #.ABR278-R6030K-65718
ManufacturerRohm Semiconductor
MPN #.R6030KNZC17
Estimated Lead Time23 Weeks
SampleGet Free Sample
DatasheetDatasheetR6030KNZC17 (PDF)
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In Stock: 210
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateDecember 23, 2024
* Quantity
Unit Price$6.1980
Ext. Price$6.1980
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$6.1980$6.1980
30$4.9480$148.4420
120$4.4270$531.2930
510$3.9060$1991.9330
1020$3.5150$3585.0450
2010$3.2940$6620.4380
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Base Product NumberR6030
Continuous Drain Current (ID) @ 25°C30A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)56 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2350 pF @ 25 V
MfrRohm Semiconductor
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation86W (Tc)
RDS(on) Drain-to-Source On Resistance130mOhm @ 14.5A, 10V
Package Type (Mfr.)TO-3PF
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 1mA
Package / CaseTO-3P-3 Full Pack
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
R6030KNZC17
Video File
4th Gen Super Junction MOSFETs R60xxYNxPresto MOS R600xVNx Series
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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Additional Details
The R6030KNZC17 is a semiconductor component manufactured by Rohm Semiconductor, designed as an N-channel MOSFET. It features a high voltage tolerance of 600 V and has a maximum continuous current capacity of 30A when measured at case temperature (Tc). The device is capable of dissipating up to 86W of power at Tc conditions and is encapsulated in a TO-3PF package, suitable for through-hole mounting. Its capacitance is specified at 2350 pF at 25 V, with a total gate charge of 56 nC when driven at 10 V, and it can tolerate gate-source voltages of ±20V. This makes the component suitable for high-power electronics that require robust voltage and current handling capabilities.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.