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R6025JNZC17N-Channel 600 V 25A (Tc) 85W (Tc) Through Hole TO-3PF

1:$5.5750

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-R6025J-174896
ManufacturerRohm Semiconductor
MPN #.R6025JNZC17
Estimated Lead Time23 Weeks
SampleGet Free Sample
DatasheetDatasheetR6025JNZC17(PDF)
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In Stock: 210
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Bag
Shipping DateNovember 7, 2024
* Quantity
Unit Price$ 5.5750
Ext. Price$ 5.5750
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$5.5750$5.5750
10$4.7810$47.8100
300$3.7490$1124.7000
600$3.5160$2109.6000
1200$3.1640$3796.8000
2100$2.9640$6224.4000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Bag
Lifecycle StatusActive
Base Product NumberR6025
Continuous Drain Current (ID) @ 25°C25A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))15V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)57 nC @ 15 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1900 pF @ 100 V
MfrRohm Semiconductor
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation85W (Tc)
RDS(on) Drain-to-Source On Resistance182mOhm @ 12.5A, 15V
Package Type (Mfr.)TO-3PF
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)7V @ 2.5mA
Package / CaseTO-3P-3 Full Pack
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
R6025JNZC17
Video File
4th Gen Super Junction MOSFETs R60xxYNxPresto MOS R600xVNx Series
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)