ABR MCRO Logo
Image is for reference only, the actual product serves as the standard.
R6020FNJTLN-Channel 600 V 20A (Tc) 304W (Tc) Surface Mount LPTS

N/A

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-R6020F-927453
ManufacturerRohm Semiconductor
MPN #.R6020FNJTL
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetLPTS TL Taping Spec(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 115
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 15, 2024
* Quantity
Send Inquiry
Add To RFQ List
Related Parts
DTA013ZMT2L$0.2320
Rohm Semiconductor
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 MHz 150 mW Surface Mount VMT3
DTA114EMFHAT2L$0.2320
Rohm Semiconductor
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 MHz 150 mW Surface Mount VMT3
R6009END3TL1$2.0600
Rohm Semiconductor
N-Channel 600 V 9A (Tc) 94W (Tc) Surface Mount TO-252
R6011KND3TL1$2.5040
Rohm Semiconductor
N-Channel 600 V 11A (Tc) 124W (Tc) Surface Mount TO-252
R6020KNZ4C13$4.5730
Rohm Semiconductor
N-Channel 600 V 20A (Tc) 231W (Tc) Through Hole TO-247
R6030ENZ4C13$5.5560
Rohm Semiconductor
N-Channel 600 V 30A (Tc) 305W (Tc) Through Hole TO-247
R6509ENJTL$2.8040
Rohm Semiconductor
N-Channel 650 V 9A (Tc) 94W (Tc) Surface Mount LPTS
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusActive
Base Product NumberR6020
Continuous Drain Current (ID) @ 25°C20A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)60 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2350 pF @ 25 V
MfrRohm Semiconductor
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation304W (Tc)
RDS(on) Drain-to-Source On Resistance280mOhm @ 10A, 10V
Package Type (Mfr.)LPTS
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 1mA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
LPTS TL Taping SpecR6020FNJTL
Design Resources
LPTSNi Inner Structure
Environmental Information
LPTS-Nip Constitution Material ListR6020FNJ ESD DataTransistor Whisker InfoTransistor, MOSFET Level 1 MSL
Other Related Documents
LPTS Part MarkingTransistor, MOSFET Flammability
Reliability Documents
LPTS MOS Reliability Test
Simulation Models
R6020FNJ Spice Model
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The R6020FNJTL is a surface-mount N-Channel MOSFET manufactured by Rohm Semiconductor, designed for high-efficiency power management. It operates at a maximum voltage of 600V and can handle a continuous current of up to 20A, with a power dissipation capacity of 304W (Tc). The device exhibits a low on-state resistance of 280mOhm at a 10A current and 10V gate drive, ensuring minimal power loss and efficient operation. Additionally, it features a gate-source threshold voltage of 5V at 1mA, optimizing it for applications that require reliable switching performance.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.