R6015KNZC17N-Channel 600 V 15A (Tc) 60W (Tc) Through Hole TO-3PF
1:$1.3940
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ABRmicro #.ABR278-R6015K-101356
ManufacturerRohm Semiconductor
MPN #.R6015KNZC17
Estimated Lead Time23 Weeks
SampleGet Free Sample
Datasheet
R6015KNZC17 (PDF)
R6015KNZC17 (PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateDecember 23, 2024
* Quantity
Unit Price$1.3940
Ext. Price$1.3940
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.3940$1.3940
30$1.1180$33.5330
120$0.9190$110.2880
510$0.8300$423.2040
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Base Product NumberR6015
Continuous Drain Current (ID) @ 25°C15A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)27.5 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1050 pF @ 25 V
MfrRohm Semiconductor
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation60W (Tc)
RDS(on) Drain-to-Source On Resistance290mOhm @ 6.5A, 10V
Package Type (Mfr.)TO-3PF
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 1mA
Package / CaseTO-3P-3 Full Pack
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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Additional Details
The R6015KNZC17 manufactured by Rohm Semiconductor is an N-Channel MOSFET transistor designed for high-voltage applications. It offers a drain-to-source voltage rating of 600 V and a continuous drain current of 15A at the case temperature. The device boasts a power dissipation capability of 60W, housed in a robust TO-3PF through-hole package. Key electrical characteristics include a gate threshold voltage of 5V at a gate current of 1mA and an input capacitance of 1050 pF at 25 V. This component is suited for efficient and reliable operation in suitable electronic circuits.
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