R6015ENZC17N-Channel 600 V 15A (Tc) 120W (Tc) Through Hole TO-3PF
1:$1.3940
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR278-R6015E-67775
ManufacturerRohm Semiconductor
MPN #.R6015ENZC17
Estimated Lead Time23 Weeks
SampleGet Free Sample
Datasheet
R6015ENZC17 (PDF)
R6015ENZC17 (PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed AuthenticityTechnical SupportFast RefundFree Shipping (over $960)Issue an Invoice24/7 Manual Service In Stock: 198
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateDecember 23, 2024
* Quantity
Unit Price$1.3940
Ext. Price$1.3940
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.3940$1.3940
30$1.1180$33.5330
120$0.9190$110.2880
510$0.8300$423.2040
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Base Product NumberR6015
Continuous Drain Current (ID) @ 25°C15A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)40 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)910 pF @ 25 V
MfrRohm Semiconductor
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation120W (Tc)
RDS(on) Drain-to-Source On Resistance290mOhm @ 6.5A, 10V
Package Type (Mfr.)TO-3PF
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseTO-3P-3 Full Pack
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desire
info@Abrmicro.com
info@Abrmicro.comExtended Links
Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Related Parts
DTA013ZMT2L$0.2320
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 MHz 150 mW Surface Mount VMT3DTA114EMFHAT2L$0.2320
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 MHz 150 mW Surface Mount VMT3
Additional Details
The part R6015ENZC17 from Rohm Semiconductor is an N-channel MOSFET designed for use in high-voltage applications, offering a drain-source voltage rating of 600 V and a continuous drain current of 15 A under specified conditions. It features a power dissipation capacity of 120 W when mounted on a suitable heatsink. Encapsulated in a TO-3PF through-hole package, this MOSFET supports a gate-source voltage of ±20 V and a gate threshold voltage of 10 V. Additionally, it has an input capacitance of 910 pF when measured at 25 V, making it suitable for handling moderate capacitance loads in various electronic circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.