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R6012JNXC7GN-Channel 600 V 12A (Tc) 60W (Tc) Through Hole TO-220FM

1:$2.4510

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-R6012J-227940
ManufacturerRohm Semiconductor
MPN #.R6012JNXC7G
Estimated Lead Time18 Weeks
SampleGet Free Sample
DatasheetDatasheetR6012JNXC7G(PDF)
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In Stock: 10
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 7, 2024
* Quantity
Unit Price$ 2.4510
Ext. Price$ 2.4510
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
50$2.4510$122.5500
100$2.1000$210.0000
250$1.9840$496.0000
500$1.8670$933.5000
1250$1.5990$1998.7500
2500$1.5050$3762.5000
5000$1.4450$7225.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Base Product NumberR6012
Continuous Drain Current (ID) @ 25°C12A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))15V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)28 nC @ 15 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)900 pF @ 100 V
MfrRohm Semiconductor
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation60W (Tc)
RDS(on) Drain-to-Source On Resistance390mOhm @ 6A, 15V
Package Type (Mfr.)TO-220FM
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)7V @ 2.5mA
Package / CaseTO-220-3 Full Pack
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
R6012JNXC7G
Video File
4th Gen Super Junction MOSFETs R60xxYNxPresto MOS R600xVNx Series
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)