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R6011END3TL1N-Channel 600 V 11A (Tc) 124W (Tc) Surface Mount TO-252

1:$2.5040

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR278-R6011E-111425
ManufacturerRohm Semiconductor
MPN #.R6011END3TL1
Estimated Lead Time23 Weeks
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DatasheetDatasheetR6011END3TL1 (PDF)
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In Stock: 220
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateDecember 23, 2024
* Quantity
Unit Price$2.5040
Ext. Price$2.5040
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.5040$2.5040
10$2.0780$20.7830
100$1.6540$165.4310
500$1.4000$700.1880
1000$1.1880$1187.8750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberR6011
Continuous Drain Current (ID) @ 25°C11A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)32 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)670 pF @ 25 V
MfrRohm Semiconductor
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation124W (Tc)
RDS(on) Drain-to-Source On Resistance390mOhm @ 3.8A, 10V
Package Type (Mfr.)TO-252
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
R6011END3TL1
Video File
4th Gen Super Junction MOSFETs R60xxYNxPresto MOS R600xVNx Series
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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Additional Details
The R6011END3TL1 is a semiconductor component manufactured by Rohm Semiconductor, featuring an N-Channel MOSFET designed for high-voltage applications. It operates with a maximum voltage of 600 V and can handle a continuous drain current of 11 A at its maximum temperature condition (Tc). The device can dissipate up to 124 watts of power in surface-mount configurations, as it utilizes a TO-252 package type. Its gate threshold voltage is specified at 10 volts, with an input capacitance of 670 pF at a drain-source voltage of 25 V, and a gate-source voltage during diode characteristic measurement of 4 V at 1 mA.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.