R6006JNXC7GN-Channel 600 V 6A (Tc) 43W (Tc) Through Hole TO-220FM
1:$1.4780
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR278-R6006J-126757
ManufacturerRohm Semiconductor
MPN #.R6006JNXC7G
Estimated Lead Time18 Weeks
SampleGet Free Sample
Datasheet
R6006JNXC7G (PDF)
R6006JNXC7G (PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed AuthenticityTechnical SupportFast RefundFree Shipping (over $960)Issue an Invoice24/7 Manual Service In Stock: 608
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateDecember 24, 2024
* Quantity
Unit Price$1.4780
Ext. Price$1.4780
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.4780$1.4780
50$1.1910$59.5530
100$0.9800$97.9630
500$0.8850$442.5310
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Base Product NumberR6006
Continuous Drain Current (ID) @ 25°C6A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))15V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)15.5 nC @ 15 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)410 pF @ 100 V
MfrRohm Semiconductor
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation43W (Tc)
RDS(on) Drain-to-Source On Resistance936mOhm @ 3A, 15V
Package Type (Mfr.)TO-220FM
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)7V @ 800µA
Package / CaseTO-220-3 Full Pack
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desire
info@Abrmicro.com
info@Abrmicro.comExtended Links
Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Related Parts
DTA013ZMT2L$0.2320
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 MHz 150 mW Surface Mount VMT3DTA114EMFHAT2L$0.2320
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 MHz 150 mW Surface Mount VMT3
Additional Details
The R6006JNXC7G is a robust MOSFET from Rohm Semiconductor, designed with an N-Channel configuration capable of handling voltages up to 600 V and a current of 6 A when properly mounted to maintain thermal performance. Encased in a TO-220FM package for through-hole mounting, this component offers a power dissipation of 43 W at the case (Tc). Its input capacitance is 410 pF at 100 V, and it features a total gate charge of 15.5 nC at 15 V, making it suitable for efficient switching operations in high-voltage environments.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.