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R6004KNJTLN-Channel 600 V 4A (Tc) 58W (Tc) Surface Mount LPTS
1:$0.8490
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ABRmicro #.ABR2045-R6004K-991195
ManufacturerRohm Semiconductor
MPN #.R6004KNJTL
Estimated Lead Time23 Weeks
SampleGet Free Sample
DatasheetLPTS TL Taping Spec(PDF)
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In Stock: 64
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.8490
Ext. Price$ 0.8490
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1000$0.8490$848.9380
2000$0.8060$1612.8750
5000$0.7760$3878.1250
10000$0.7500$7501.2500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 MHz 150 mW Surface Mount VMT3 Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusActive
Base Product NumberR6004
Continuous Drain Current (ID) @ 25°C4A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)10.2 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)280 pF @ 25 V
MfrRohm Semiconductor
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation58W (Tc)
RDS(on) Drain-to-Source On Resistance980mOhm @ 1.5A, 10V
Package Type (Mfr.)LPTS
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 1mA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
Environmental Information
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The R6004KNJTL is an N-Channel MOSFET manufactured by Rohm Semiconductor, designed for handling high voltage and power applications. It operates at a voltage of 600 V and a current capacity of 4A when considering case temperature (Tc), with a power dissipation capability of 58W also based on Tc. The MOSFET is in a surface mount package, featuring a low on-resistance of 980 milliohms at a drain current of 1.5A and a gate-source voltage of 10V. Additionally, it has a typical gate charge of 10.2 nanocoulombs at 10V, suitable for efficient switching performance.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.