R6004END3TL1N-Channel 600 V 4A (Tc) 59W (Tc) Surface Mount TO-252
1:$1.2990
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ABRmicro #.ABR278-R6004E-115639
ManufacturerRohm Semiconductor
MPN #.R6004END3TL1
Estimated Lead Time23 Weeks
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Datasheet
R6004END3TL1 (PDF)
R6004END3TL1 (PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateDecember 23, 2024
* Quantity
Unit Price$1.2990
Ext. Price$1.2990
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.2990$1.2990
10$1.0780$10.7840
100$0.8590$85.8500
500$0.7270$363.3750
1000$0.6160$616.2500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberR6004
Continuous Drain Current (ID) @ 25°C4A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)15 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)250 pF @ 25 V
MfrRohm Semiconductor
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation59W (Tc)
RDS(on) Drain-to-Source On Resistance980mOhm @ 1.5A, 10V
Package Type (Mfr.)TO-252
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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Additional Details
The R6004END3TL1 is an N-Channel MOSFET manufactured by Rohm Semiconductor, designed for efficient power management in a compact form factor. This surface-mount device, housed in a TO-252 package, is capable of handling voltages up to 600 V and currents up to 4 A (when properly heat-sinked or cooled to maintain the case temperature). It dissipates power at a rate of 59 W under specified conditions, ensuring reliable performance in demanding environments. The MOSFET also features an input capacitance of 250 pF at 25 V and has a gate threshold voltage tolerance of ±20V, which supports stable operation across a variety of electronic applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.